A low voltage to high voltage level shifter in a low voltage, 0.25/spl mu/m PD SOI process

@article{Mentze2004ALV,
  title={A low voltage to high voltage level shifter in a low voltage, 0.25/spl mu/m PD SOI process},
  author={E. J. Mentze and K. M. Buck and H. Hess and D. Cox and M. Mojarradi},
  journal={IEEE Computer Society Annual Symposium on VLSI},
  year={2004},
  pages={218-221}
}
  • E.J. Mentze, K.M. Buck, +2 authors M. Mojarradi
  • Published 2004
  • Engineering, Computer Science
  • IEEE Computer Society Annual Symposium on VLSI
  • This paper describes a low voltage to high voltage logic level shifter that has been designed entirely in a low breakdown voltage process. As such, the scalability of the design to higher output levels has not been restricted by the fabrication process used. Further, to increase the output voltage capability of the design, without altering the fabrication process in any way, the University of Idaho developed high voltage, laterally diffused MOSFET (LDMOSFET) is used for the output driver. By… CONTINUE READING
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    References

    SHOWING 1-6 OF 6 REFERENCES
    High Voltage Devices and Circuits in Standard CMOS Technologies
    • 114
    • PDF
    CMOS Circuit Design, Layout, and Simulation
    • 2,715
    • PDF
    Mojarradi, “Development and Testing of High-Voltage Devices Fabricated in Standard CMOS and SOI Technologies.
    • Trans. NASA Symposium on VLSI,
    • 2003
    CMOS: Circuit Design
    • CMOS: Circuit Design
    • 1998
    Development and Testing of High - Voltage Devices Fabricated in Standard CMOS and SOI Technologies
      Vin
      • Vin