A low voltage CMOS-based capacitive micromachined ultrasonic sensors development


This paper presents a high performance capacitive micromachined ultrasound sensor (CMUS) with a large fractional bandwidth (FB) ~113 % and a low bias voltage of 5 V in an immersion testing of an ultrasonic sensor. The thin polysilicon for the CMOS gate was utilized as a sacrificial layer and the multiple layers of metal and dielectric for the CMOS electric… (More)


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