A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications

@article{Chiu2010ALS,
  title={A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications},
  author={Pi-Feng Chiu and Meng-Fan Chang and Shyh-Shyuan Sheu and Ku-Feng Lin and Pei-Chia Chiang and Che-Wei Wu and Wen-Pin Lin and Chih-He Lin and Ching-Chih Hsu and Frederick T. Chen and Keng-Li Su and Ming-Jer Kao and Ming-Jinn Tsai},
  journal={2010 Symposium on VLSI Circuits},
  year={2010},
  pages={229-230}
}
This work demonstrates the first fabricated macro-level RRAM-based nonvolatile SRAM (nvSRAM) that use a new 8T2R (Rnv8T) cell to achieve fast NVM storage and low VDDmin read/write operations. The Rnv8T cell uses two fast-write low-current RRAM devices, 3D stacked over the 8T, to achieve low store energy with a compact cell area (1.6x that of a 6T cell). A 2T RRAM-switch provides both RRAM control and write-assist functions. This write assist feature enables Rnv8T cell to use read favored… CONTINUE READING
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