A low power phase change memory using thermally confined TaN/TiN bottom electrode

@article{Wu2011ALP,
  title={A low power phase change memory using thermally confined TaN/TiN bottom electrode},
  author={J. Y. Wu and Matthew J. Breitwisch and SangBum Kim and T. H. Hsu and Roger Cheek and P. Y. Du and Jun-Tao Li and E. K. Lai and Yu Zhu and T. Y. Wang and H. Y. Cheng and Alex Schrott and E. A. Joseph and R. Dasaka and Simone Raoux and M. H. Lee and H. L. Lung and C. H. Lam},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={3.2.1-3.2.4}
}
Application of phase change memory (PCM) has been limited by the high power required to reset the device (changing from crystalline to amorphous state by melting the phase change material). Utilizing the poor thermal and electrical conductivity of TaN we have designed a simple structure that thermally insulates the bottom electrode and thus drastically reduces the heat loss. A 39nm bottom electrode with a TaN thermal barrier and 1.5nm of TiN conductor has demonstrated 30µA reset current… CONTINUE READING
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