A low-power multichannel receiver for D-band sensing applications in a 0.13µm SiGe BiCMOS technology

Abstract

This paper presents a low-power multichannel receiver front-end for D-band applications implemented in a 0.13µm SiGe BiCMOS technology, featuring HBTs with fT/fmax of 250/360 GHz. The receivers are driven by a V to D-band frequency doubler via an external local oscillator signal. Measurements on a breakout chip of the doubler shows a maximum conversion gain… (More)

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