A low-noise single-photon detector implemented in a 130 nm CMOS imaging process

@article{Gersbach2009ALS,
  title={A low-noise single-photon detector implemented in a 130 nm CMOS imaging process},
  author={Marek Gersbach and Justin A. Richardson and Eric Mazaleyrat and Stephane Hardillier and Cristiano Niclass and Robert K. Henderson and Lindsay Grant and Edoardo Charbon},
  journal={Solid-state Electronics},
  year={2009},
  volume={53},
  pages={803-808}
}
We report on a new single-photon avalanche diode (SPAD) fabricated in a 130 nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakdown. Thanks to this guard ring, unprecedented levels of miniaturization may be achieved at no cost of added noise, decreased sensitivity, or timing resolution. The detector, integrated along with quenching and readout electronics, was fully… Expand
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