A low-noise, process-variation-tolerant double-gate FinFET based sense amplifier

@article{Rathod2011ALP,
  title={A low-noise, process-variation-tolerant double-gate FinFET based sense amplifier},
  author={Surendra S. Rathod and Ashok K. Saxena and Sudeb Dasgupta},
  journal={Microelectronics Reliability},
  year={2011},
  volume={51},
  pages={773-780}
}
In this paper, we propose a new independent-gate, process-variation-tolerant double-gate (DG) FinFET based sense amplifier design. The new design exploits the DICE (dual interlock cell) latch and the back gate of a double-gate FinFET (DG FinFET) device for dynamic compensation against process variation. The proposed design improves the sensing delay and show excellent tolerance to process variations as compared to independent-gate sense amplifier (IGSA). The primary advantage of the proposed… CONTINUE READING

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