A linear GaN UHF SSPA with record high efficiency

  title={A linear GaN UHF SSPA with record high efficiency},
  author={Allen Katz and Brian Eggleston and David Michael McGee},
  journal={2009 IEEE MTT-S International Microwave Symposium Digest},
This paper discusses a highly efficient linear UHF solid state power amplifier (SSPA) developed for avionics and space applications. Predistortion linearization combined with high-voltage gallium nitride (GaN) FET technology allows the simultaneous achievement of both linearity and record high linear efficiency (70%). This amplifier will produce over 100 W of linear output power as well as a power added efficiency (PAE) at saturation approaching 90 percent. This paper describes the power… CONTINUE READING


Publications citing this paper.
Showing 1-6 of 6 extracted citations


Publications referenced by this paper.
Showing 1-6 of 6 references

A Highly Efficient UHF Power Amplifier Using GaAs FETs for Space Applications

  • A. Katz
  • MTT-S International Microwave Symposium Digest…
  • 2007
1 Excerpt

Wideband GaN Linearizer

  • A. Katz, M. Kubak, G. DeSalvo
  • Digest of 2006 Government Microcircuit…
  • 2006
1 Excerpt

Linearization: Reducing Distortion in Power Amplifiers

  • A. Katz
  • IEEE Microwave Mag., pp. 37-49, Dec. 2001.
  • 2001
1 Excerpt

Evaluation and Correction of Time Dependent Amplifier Non-Linearity

  • A. Katz, R. Dorval
  • IEEE MTT-S IMS Digest, pp. 839-842, June 1996.
  • 1996
1 Excerpt

Similar Papers

Loading similar papers…