A highly manufacturable 110 nm EDRAM process with Al/sub 2/O/sub 3/ stack MIM capacitor for cost effective high density, high speed, low voltage ASIC memory applications

@article{Fishburn2003AHM,
  title={A highly manufacturable 110 nm EDRAM process with Al/sub 2/O/sub 3/ stack MIM capacitor for cost effective high density, high speed, low voltage ASIC memory applications},
  author={F. Fishburn and Ralph Kauffman and Richard O. Lane and Tha’Mes McDaniel and Kevin M. Schofield and Stephen M. Southwick and Rose H. Turi and Hongmei Wang},
  journal={2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)},
  year={2003},
  pages={75-76}
}
A highly manufacturable 110 nm Embedded DRAM technology with stack Al/sub 2/O/sub 3/ MIM capacitor has been demonstrated successfully for the first time. High-density DRAM core with 0.1 /spl mu/m/sup 2/ cell size and high performance logic circuits have been realized at the same time by separation of the gate pattern at memory cell and peripheral logic region. Low temperature BDL process, highly reliable Al/sub 2/O/sub 3/ MIM capacitors have been developed to control process temperature. DRAM… CONTINUE READING
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A fully integrated A1203 Trench capacitor DRAM for Sub-100 Technology

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