A high sensitivity CMOS compatible urea enzyme field effect transistor without enzyme immobilizationer

Abstract

This paper presents a complementary metal-oxide-semiconductor (CMOS) compatible urea enzyme field effect transistor (FET) without enzyme immobilization. The natural formed aluminum oxide (Al2O3) above the top metal is used as the hydrogen sensing membrane. All the devices were fabricated by TSMC 0.35μm 2P4M CMOS process. In order to realize the micro… (More)

5 Figures and Tables

Topics

  • Presentations referencing similar topics