A high-k, metal gate vertical-slit FET for ultra-low power and high-speed applications

@article{Kumar2015AHM,
  title={A high-k, metal gate vertical-slit FET for ultra-low power and high-speed applications},
  author={S. Vinoth Kumar and Sarabjeet Kaur and Rohit Sharma},
  journal={2015 Annual IEEE India Conference (INDICON)},
  year={2015},
  pages={1-5}
}
In this paper, we propose a novel Vertical-Slit Field Effect Transistor (VeSFET) with high-k gate dielectrics and metallic gates with different work function (Φm). The gate dielectric material and gate electrodes in traditional VeSFETs are replaced by high-k dielectrics and metals, respectively. We investigate the effect of these on the electrical characteristics of our proposed device. Various performance parameters such as Drain Induced Barrier Lowering (DIBL), Sub-threshold Swing (SS… CONTINUE READING