A high-gain, low-noise switched capacitor readout for FET-based THz detectors


A noise-efficient readout interface designed in a 150nm standard CMOS technology for a FET based THz radiation detector is presented. The interface is able to detect μV-range rectified signal from the FET detector, amplifying it by 70 dB gain. A multistage switched-capacitor (SC) readout channel employing chopper modulation is exploited so as to… (More)
DOI: 10.1109/ESSCIRC.2016.7598326


3 Figures and Tables