We report the performance of a monolithic V-band power amplifier using 0.15-/spl mu/m double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-/spl mu/m device driving a 2/spl times/400-/spl mu/m device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data… (More)

Millimeter-Wave High Power Amplifiers using Pseudomorphic HEMTs,

A. K. Sharma

IEEE M7T-S Symp. Dig.,

1994

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@article{Kasody1994AHE,
title={A high efficiency V-band monolithic HEMT power amplifier},
author={R. E. Kasody and G. S . Dow and A. K. Sharma and M. Aust and D. Yamauchi and R. Lai and Mike Biedenbender and K. Tan and B. R. Allen},
journal={IEEE Microwave and Guided Wave Letters},
year={1994},
volume={4},
pages={303-304}
}