A high efficiency V-band monolithic HEMT power amplifier


We report the performance of a monolithic V-band power amplifier using 0.15-/spl mu/m double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT's. The amplifier using a 400-/spl mu/m device driving a 2/spl times/400-/spl mu/m device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data… (More)

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@article{Kasody1994AHE, title={A high efficiency V-band monolithic HEMT power amplifier}, author={R. E. Kasody and G. S . Dow and A. K. Sharma and M. Aust and D. Yamauchi and R. Lai and Mike Biedenbender and K. Tan and B. R. Allen}, journal={IEEE Microwave and Guided Wave Letters}, year={1994}, volume={4}, pages={303-304} }