A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency

@article{Deng2004AHS,
  title={A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency},
  author={Junxiong Deng and Prasad S. Gudem and Lawrence E. Larson and Peter M. Asbeck},
  journal={2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers},
  year={2004},
  pages={361-364}
}
This paper demonstrates a WCDMA single-stage power amplifier, fabricated in a 0.25 /spl mu/m SiGe BiCMOS process. With dynamic biasing of the collector current, the average power efficiency is improved by more than a factor of two compared to a typical class AB power amplifier. The power amplifier satisfies the 3GPP class-III WCDMA adjacent channel power ratio (ACPR) specifications (ACPR_5M= -33 dBc and ACPR_10M = -58.8 dBc) with 23.9 dBm average channel output power. The measured output power… CONTINUE READING

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