A high density, low leakage, 5T SRAM for embedded caches

Abstract

This paper describes an embedded high density 128 Kb memory, utilizing a 5-transistor (5T) single bitline SRAM cell in a standard 0.18 /spl mu/m CMOS technology. The 5T-SRAM cell allows writing of '1', when the voltage at its single bitline is at Vcc. As a consequence, for a nondestructive read operation, the bitline is precharged to a voltage Vpc=600 mV… (More)

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@article{Carlson2004AHD, title={A high density, low leakage, 5T SRAM for embedded caches}, author={Ilene Carlson and S. Andersson and S. Natarajan and Atila Alvandpour}, journal={Proceedings of the 30th European Solid-State Circuits Conference}, year={2004}, pages={215-218} }