A high breakdown voltage IC with lateral power device based on SODI structure

Abstract

A high-performance power technology has been developed, in which a conventional SOI lateral power device is merged with novel thick film technology on the backside of its substrate, such as a silicon on double insulator (SODI) structure. In addition to realizing a high breakdown voltage performance, with the assumption of 1.2 kV class applications, the SODI… (More)

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