A gold free fully Cu/Ge metalized GaAs pHEMT for the high frequency applications

@article{Erofeev2011AGF,
  title={A gold free fully Cu/Ge metalized GaAs pHEMT for the high frequency applications},
  author={Evgeny Erofeev and Valery A. Kagadei and Artyom I. Kazimirov},
  journal={2011 International Siberian Conference on Control and Communications (SIBCON)},
  year={2011},
  pages={261-264}
}
The DC and RF performance of the fully Cu/Ge metalized GaAs pHEMT and pHEMT with Cu/Ge ohmic contacts and Ti/Mo/Cu based T-gate were investigated. The Cu/Ge compound was formed by the atomic hydrogen treatment of Cu/Ge/GaAs two layer system. It was found, that such processing in an atomic hydrogen flow with density 10<sup>15</sup> at. cm<sup>2</sup> s<sup>−1</sup> at room temperature during 5 min leads to the solid state interdiffusion of Cu and Ge thin films and polycrystalline CuGe compound… CONTINUE READING