A generalized model for total electrical characterization of bulk traps and interface properties in semiconductor-insulator-semiconductor structure: static, dynamic, and transient approaches

@inproceedings{Chen1989AGM,
  title={A generalized model for total electrical characterization of bulk traps and interface properties in semiconductor-insulator-semiconductor structure: static, dynamic, and transient approaches},
  author={Hung-sheng Chen and Sheng San Li},
  year={1989}
}
Summary form only given. The authors present a novel theoretical and experimental approach using independent static, dynamic, and transient measurements to analyze the double interfaces and volume trapping properties of SOI (silicon-on-insulator) materials. In particular, they develop a generalized model appropriate for the study of interfaces, bulk traps, and buried oxide properties using the inherent semiconductor-insulator-semiconductor (SIS) capacitor structure of the unprocessed SOI… CONTINUE READING