A gallium arsenide overlapping-gate charge-coupled device

@article{Nichols1985AGA,
  title={A gallium arsenide overlapping-gate charge-coupled device},
  author={K H Nichols and B. Burke},
  journal={IEEE Electron Device Letters},
  year={1985},
  volume={6},
  pages={237-240}
}
We have developed a new CCD fabrication process for producing an overlapping gate structure which permits submicrometer control of the gap size while using conventional lithography. This process has been used to fabricate four-phase 16-stage Schottky barrier CCD's on GaAs with charge transfer inefficiencies of less than 2 × 10-4at a 1-MHz clock rate… CONTINUE READING