A future of function or failure? [CMOS gate oxide scaling]

@article{Alam2002AFO,
  title={A future of function or failure? [CMOS gate oxide scaling]},
  author={Muktar Alam and Brooke Weir and A. Silverman},
  journal={IEEE Circuits and Devices Magazine},
  year={2002},
  volume={18},
  pages={42-48}
}
Transistors are scaled in each successive technology generation to increase circuit speed and to improve packing density. However, as the devices get smaller and the gate oxides thinner, ensuring their reliability becomes increasingly difficult. The simple question is: based on the current reliability specifications, will 99.99% of the ICs produced today with given technology remain functional for at least ten years into the future? This is a question that device engineers, circuit designers… CONTINUE READING
Highly Cited
This paper has 19 citations. REVIEW CITATIONS

From This Paper

Figures, tables, results, connections, and topics extracted from this paper.
11 Extracted Citations
0 Extracted References
Similar Papers

Citing Papers

Publications influenced by this paper.
Showing 1-10 of 11 extracted citations

Similar Papers

Loading similar papers…