A fundamental performance limit of optimized 3.3 V subquarter micron fully overlapped LDD MOSFETs

@article{Bryant1990AFP,
  title={A fundamental performance limit of optimized 3.3 V subquarter micron fully overlapped LDD MOSFETs},
  author={Andres Bryant and B. El-Kareh and Takashi Furukawa and Willa Noble and Edward J. Nowak and W. Tonti},
  journal={Digest of Technical Papers.1990 Symposium on VLSI Technology},
  year={1990},
  pages={45-46}
}
This research reports the direct experimental quantification of the relationship between gate-to-drain capacitance (Cgd) and hot-electron reliability (HER) for fully overlapped lightly-doped-drain (FOLD) n-channel MOSFETs (NFETs). Based on this result it is shown that a peak in device performance occurs at an effective channel length of approximately 0.22 μm for reliable 3.3 V FOLD NFETs having a gate oxide thickness of 10 nm. Below 0.22 μm, performance actually decreases due to the… CONTINUE READING

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