A fully plasma etched-ion implanted CMOS process

@article{Aitken1976AFP,
  title={A fully plasma etched-ion implanted CMOS process},
  author={A. Aitken and R. Poulsen and A. MacArthur and J. White},
  journal={1976 International Electron Devices Meeting},
  year={1976},
  pages={209-213}
}
In this paper we shall describe the use of plasma etching and ion implantation to simplify CMOS processing and for tight control of fine dimensions. The above techniques have provided the basis for a CMOS process capable of fabricating devices with geometries as small as 2 microns. The process sequence will be described and some of the problems concerning specific fabrication steps will be discussed. None of the dry etching or ion implantation stages caused degradation of device characteristics… Expand
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Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristicsExpand