A full time-domain approach to spatio-temporal dynamics of active semiconductor devices

Abstract

We present a finite-difference full time-domain model including the macroscopic Maxwell curl equations and the band-resolved semiconductor Bloch equations. A key element of our novel formulation is that neither the slowly varying amplitude nor the rotating wave approximation are necessary. This makes the model accurate to a broad frequency range. The propagation, amplification and reshaping of femtosecond pulses in active semiconductor amplifiers as well as optically pumped monolithic disk lasers with sub-wavelength refractive index structures and nonlinear gain or absorber elements are simulated.

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Cite this paper

@article{Boehringer2005AFT, title={A full time-domain approach to spatio-temporal dynamics of active semiconductor devices}, author={K. Boehringer and O. van Hess}, journal={NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005.}, year={2005}, pages={79-80} }