A frequency-domain study on the effect of DC-link decoupling capacitors

@article{Chen2013AFS,
  title={A frequency-domain study on the effect of DC-link decoupling capacitors},
  author={Zheng Chen and Dushan Boroyevich and Paolo Mattavelli and Khai D. T. Ngo},
  journal={2013 IEEE Energy Conversion Congress and Exposition},
  year={2013},
  pages={1886-1893}
}
DC-link decoupling capacitors are generally placed near the power switches in the converter to minimize the parasitic ringing and voltage overshoot on the devices. In this paper, the influence of decoupling capacitors on the turn-off parasitic ringing of power MOSFETs is studied in the frequency domain based on a small-signal modeling approach. This new angle helps explain the effect of these capacitors in a simpler and more straightforward way compared to the traditional time-domain analysis… CONTINUE READING
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Effect of parasitic elements in a power converter on the switching performance of a MOSFET - snubber - diode configuration , ” in

  • D. Boroyevich Chen, R. Burgos
  • Proc . IEEE APEC
  • 2011

Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

  • Z. Chen
  • M. S. Thesis,
  • 2009
1 Excerpt

MOSFET device effects on phase node ringing in VRM power converters

  • ST Microelectronics
  • Application Note AN2170, Jun. 2005.
  • 2005
1 Excerpt

MOSFET switching behavior under influence of PCB stray inductances

  • W. Teulings, J. L. Schanen, J. Roudet
  • Proc. IEEE IAS 1996, vol. 3, pp. 1449-1453, 1996.
  • 1996
2 Excerpts

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