A flow-through ion-selective field-effect transistor

@inproceedings{Sibbald1987AFI,
  title={A flow-through ion-selective field-effect transistor},
  author={Alastair Sibbald and J. E. Shaw},
  year={1987}
}
Abstract A novel, flow-through ion-selective field-effect transistor structure has been developed. A square aperture is anisotropically etched through a silicon substrate having source and drain regions on the lower and upper surfaces respectively, and the device is appropriately engineered so that the inner wall of the aperture form the active gate region of the flow-through transistor. The flow-through ISFET has a very small sample volume (‘0.4 μL), is hydrodynamically efficient and can be… CONTINUE READING