# A ferroelectric memristor.

@article{Chanthbouala2012AFM,
title={A ferroelectric memristor.},
author={A. Chanthbouala and V. Garcia and R. Cherifi and K. Bouzehouane and S. Fusil and X. Moya and S. Xavier and Hiroyuki Yamada and C. Deranlot and N. Mathur and M. Bibes and A. Barth{\'e}l{\'e}my and J. Grollier},
journal={Nature materials},
year={2012},
volume={11 10},
pages={
860-4
}
}
Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour… Expand
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#### References

SHOWING 1-10 OF 36 REFERENCES
The missing memristor found
• Physics, Medicine
• Nature
• 2008
It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. Expand
Nanoscale memristor device as synapse in neuromorphic systems.
• Materials Science, Medicine
• Nano letters
• 2010
A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Expand
Memristive switching mechanism for metal/oxide/metal nanodevices.
• Materials Science, Medicine
• Nature nanotechnology
• 2008
Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built. Expand
Memristive devices and systems
• Engineering
• Proceedings of the IEEE
• 1976
A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems areExpand
Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
• Physics
• IEEE Electron Device Letters
• 2009
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects areExpand
Memristor-The missing circuit element
A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{-Expand
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.
The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature, promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices. Expand
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
The approach exploits the otherwise undesirable leakage current—dominated by tunnelling at these very low thicknesses—to read the polarization state without destroying it, and demonstrates scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch-2. Expand
Solid-state memories based on ferroelectric tunnel junctions.
Non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature are reported by storing data in the electric polarization direction of a ferroelectric tunnel barrier. Expand
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
• D. Kwon, +9 authors C. Hwang
• Materials Science, Medicine
• Nature nanotechnology
• 2010
In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films. Expand