A ferroelectric memristor.

@article{Chanthbouala2012AFM,
  title={A ferroelectric memristor.},
  author={Andre Chanthbouala and Vincent Garcia and R. O. Cherifi and Karim Bouzehouane and Stephane Fusil and Xavier Moya and St{\'e}phane Xavier and Hiroyuki Yamada and Cyrile Deranlot and Neil D Mathur and Manuel Bibes and Agn{\`e}s Barth{\'e}l{\'e}my and Julie Grollier},
  journal={Nature materials},
  year={2012},
  volume={11 10},
  pages={
          860-4
        }
}
Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour… 
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