A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation

@article{Assaderaghi1994ADT,
  title={A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation},
  author={Fariborz Assaderaghi and S. Parke and Dennis Sinitsky and Jeffrey Bokor and P S Ko and Chenming Hu},
  journal={IEEE Electron Device Letters},
  year={1994},
  volume={15},
  pages={510-512}
}
A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low V/sub dd/. On the other hand, V/sub t/ is high at V/sub gs/=0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to V… CONTINUE READING
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