A double barrier memristive device

@inproceedings{Hansen2015ADB,
  title={A double barrier memristive device},
  author={Mirko Hansen and Martin Ziegler and Laura Kolberg and Ruchit Soni and Sven Dirkmann and Thomas Mussenbrock and Hermann Kohlstedt},
  booktitle={Scientific reports},
  year={2015}
}
We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamentary based resistive switching mechanism. In a detailed experimental and theoretical analysis we show… CONTINUE READING
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