A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM

Abstract

A magnetic-tunnel-junction (MTJ) circuit model, which considers spin dynamics under finite temperature, electrical bias, a stochastic process, and spin-transfer torque, was developed. Switching behaviors simulated by this model were verified by experimental measurements. Moreover, a disturbance-free read scheme for Gbit-scale spin-transfer torque RAM (SPRAM… (More)

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