A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance

@article{Xu1998ACM,
  title={A conductivity modulated high voltage polycrystalline silicon thin film transistor with improved on state and transient performance},
  author={Y. Z. Xu and F. J. Clough and E Narayanan and Y. Chen and W. Milne},
  journal={International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)},
  year={1998},
  pages={273-276}
}
A novel high voltage polycrystalline silicon thin film transistor, with an improved on state and transient performance, is presented in this report. The key features of the new structure are the combination of a p/sup +/ drain and a semi-insulating field plate which connects the gate to the drain. Minority carrier injection from the p/sup +/ drain increases the on state current by a factor of 5 and reduces the 'turn on' time by over 10%. The minority carrier injection effects decay over sub… CONTINUE READING

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