A concept of SOI RESURF lateral devices with striped trench electrodes

@article{Kanechika2005ACO,
  title={A concept of SOI RESURF lateral devices with striped trench electrodes},
  author={M. Kanechika and M. Kodama and T. Uesugi and H. Tadano},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1205-1210}
}
This paper presents a concept of silicon-on insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction. These trench electrodes reduce the electric field at the pn junctions sandwiched between the electrodes. We experimentally applied this RESURF technology to a conventional pn/sup -/ lateral diode. As a result, the breakdown voltage was increased from 56 to 104 V without varying the impurity concentration… Expand
19 Citations
High performance SOI lateral trench dual gate power MOSFET
  • Y. Singh, M. Punetha
  • Computer Science
  • 2012 International Conference on Communications, Devices and Intelligent Systems (CODIS)
  • 2012
Novel Superjunction Power MOSFET
  • PDF
The performance study of oxide by-passed(OB) lateral double diffused MOSFET
  • P. Tang
  • Materials Science, Engineering
  • Other Conferences
  • 2016
Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS
  • J. Sonsky, A. Heringa
  • Engineering
  • Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's
  • 2007
  • 7
  • Highly Influenced
Numerical Analysis of the LDMOS With Side Triangular Field Plate
  • 1
Buried-oxide-in-drift-region technique for breakdown voltage of trench power MOSFETs
...
1
2
...

References

SHOWING 1-10 OF 11 REFERENCES
A review of RESURF technology
  • A. W. Ludikhuize
  • Engineering
  • 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
  • 2000
  • 293
Super junction LDMOST in silicon-on-sapphire technology (SJ-LDMOST)
  • S. Nassif-Khalil, C. Salama
  • Materials Science
  • Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
  • 2002
  • 36
Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices
  • 66
  • Highly Influential
Self-aligned RESURF to LOCOS region LDMOS characterization shows excellent R/sub sp/ vs BV performance
  • 28
Realization of high breakdown voltage (>700 V) in thin SOI devices
  • 202
Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power process
  • 23
  • Highly Influential
High voltage thin layer devices (RESURF devices)
  • 459
An optimized RESURF LDMOS power device module compatible with advanced logic processes
  • 45
  • PDF
...
1
2
...