A concept of SOI RESURF lateral devices with striped trench electrodes

@article{Kanechika2005ACO,
  title={A concept of SOI RESURF lateral devices with striped trench electrodes},
  author={Masakazu Kanechika and Masaru Kodama and Tomonori Uesugi and Hiroto Tadano},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1205-1210}
}
  • Masakazu Kanechika, Masaru Kodama, +1 author Hiroto Tadano
  • Published in
    IEEE Transactions on Electron…
    2005
  • Physics
  • This paper presents a concept of silicon-on insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction. These trench electrodes reduce the electric field at the pn junctions sandwiched between the electrodes. We experimentally applied this RESURF technology to a conventional pn/sup -/ lateral diode. As a result, the breakdown voltage was increased from 56 to 104 V without varying the impurity concentration… CONTINUE READING

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