A concept of SOI RESURF lateral devices with striped trench electrodes

@article{Kanechika2005ACO,
  title={A concept of SOI RESURF lateral devices with striped trench electrodes},
  author={Masakazu Kanechika and Masaya Kodama and Tsutomu Uesugi and Hiroto Tadano},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1205-1210}
}
This paper presents a concept of silicon-on insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction. These trench electrodes reduce the electric field at the pn junctions sandwiched between the electrodes. We experimentally applied this RESURF technology to a conventional pn/sup -/ lateral diode. As a result, the breakdown voltage was increased from 56 to 104 V without varying the impurity concentration… CONTINUE READING
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