A comprehensive and critical re-assessment of 2-stage energy level NBTI model

@article{Gupta2012ACA,
  title={A comprehensive and critical re-assessment of 2-stage energy level NBTI model},
  author={Swapnil R. Gupta and B. Jose and K U Joshi and Ankit Jain and M. A. Alam and Souvik Mahapatra},
  journal={2012 IEEE International Reliability Physics Symposium (IRPS)},
  year={2012},
  pages={XT.3.1-XT.3.6}
}
  • Swapnil R. Gupta, B. Jose, +3 authors Souvik Mahapatra
  • Published in
    IEEE International…
    2012
  • Engineering
  • The two stage a.k.a. four energy level NBTI model has been comprehensively re-evaluated by investigating its predictive capabilities beyond the ultra-short stress duration for which it was originally validated. It is found that the model, with its default parameters, can indeed reproduce short time (~1s) stress and subsequent recovery with good accuracy. The default model however does not anticipate well-known experimental results for longer stress duration. Other combination of parameters may… CONTINUE READING

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    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 18 REFERENCES

    A two-stage model for negative bias temperature instability

    VIEW 13 EXCERPTS
    HIGHLY INFLUENTIAL

    A Model for Switching Traps in Amorphous Oxides

    VIEW 7 EXCERPTS
    HIGHLY INFLUENTIAL

    A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery

    VIEW 6 EXCERPTS

    A consistent physical framework for N and P BTI in HKMG MOSFETs

    VIEW 1 EXCERPT

    A Model for Switching Traps in Amorphous Oxides , ” in Simulation of Semiconductor Processes and Devices , 2009 . SISPAD ’ 09

    • T. Grasser Goes, M. Karner, B. Kaczer
    • 2010

    Two independent components modeling for Negative Bias Temperature Instability

    • Vincent Huard
    • Engineering
    • 2010 IEEE International Reliability Physics Symposium
    • 2010
    VIEW 2 EXCERPTS