A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

@article{Goel2014ACD,
  title={A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs},
  author={Nilesh Goel and Sudipta Mukhopadhyay and N. Nanaware and Sandip De and Rajan Kumar Pandey and K. R. Murali and Souvik Mahapatra},
  journal={2014 IEEE International Reliability Physics Symposium},
  year={2014},
  pages={6A.4.1-6A.4.12}
}
DC and AC NBTI in deep EOT scaled HKMG p-MOSFETs with different IL (scaled to sub 2Å) are measured by UF-MSM method with 10μs delay. A model with interface trap generation (ΔV<sub>IT-IL</sub>) at Si/IL interface, hole trapping (ΔV<sub>HT</sub>) in IL bulk and trap generation (ΔV<sub>IT-HK</sub>) linked to H passivated Oxygen vacancy (Ov-H) defects in IL/HK interfacial transition layer has been proposed. The existence of Ov defects and their energy levels are verified using DFT simulation. The… CONTINUE READING
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