A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers

@article{Niwa2003ACI,
  title={A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers},
  author={Takaki Niwa and Takashi Ishigaki and Hidenori Shimawaki and Yasunobu Nashimoto},
  journal={IEEE MTT-S International Microwave Symposium Digest, 2003},
  year={2003},
  volume={2},
  pages={711-714 vol.2}
}
This paper reports on an InGaP/GaAs HBT with a GaAs/InGaP composite collector for a GSM power amplifier. The GaAs/InGaP composite collector enables the device to pass a ruggedness test with SWR=10:1 at V/sub CE/ >5 V, keeping the total collector thickness of around 900 nm and with a high power added efficiency (PAE). The load-pull measurement results for multi-cell HBTs with total emitter size of 7200 /spl mu/m/sup 2/ reveals a PAE of 74% at Pout=35 dBm and V/sub CE/=3.5 V for the composite… CONTINUE READING

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