A comparison of majority- and minority-carrier silicon MIS solar cells

@article{Ng1980ACO,
  title={A comparison of majority- and minority-carrier silicon MIS solar cells},
  author={K M Ng and H G Card},
  journal={IEEE Transactions on Electron Devices},
  year={1980},
  volume={27},
  pages={716-724}
}
  • K M Ng, H G Card
  • Published 1980 in IEEE Transactions on Electron Devices
A systematic experimental investigation is reported of metal-SiO<inf>2</inf>-silicon (MIS) solar cells, as a function of SiO<inf>2</inf>thickness<tex>d</tex>, in the useful range 8 Å <<tex>d</tex>< 20 Å. Both majority-carder (Au-SiO<inf>2</inf>- nSi) and minority-carrier (Al-SiO<inf>2</inf>-pSi) structures are studied and their performance compared for SiO<inf>2</inf>layers prepared under identical oxidation conditions and with identical silicon surface treatments. The short-circuit current… CONTINUE READING