A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

@inproceedings{Palestri2011ACO,
  title={A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs},
  author={Pierpaolo Palestri and Craig Alexander and A. Asenov and Valerie Aubry-Fortuna and G.. Baccarani and Arnaud Bournel and M. Braccioli and Binjie Cheng and Philippe Dollfus and Antonio Esposito and David Esseni and C. Fenouillet-Beranger and C.. Fiegna and Gianluca Fiori and A. Ghetti and Giuseppe Iannaccone and Antonio Martinez and Bogdan Majkusiak and Stephanie Monfray and Vincent Peikert and S.. Reggiani and Craig Riddet and Jerome Saint-Martin and Enrico Sangiorgi and Andreas Schenk and Luca Selmi and Luca Silvestri and P. Toniutti and Jarosław Walczak},
  year={2011}
}
In this paper we compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from drift–diffusion to direct solutions of the BoltzmannTransport-Equation with the Monte-Carlo method. Template devices representative of 22 nm Double-Gate and 32 nm Single-Gate Fully-Depleted SiliconOn-Insulator transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Using… CONTINUE READING

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