A comparative study of junctionless dual material double gate silicon on insulator (SOI) and silicon on nothing (SON) MOSFET

@article{Chauhan2017ACS,
  title={A comparative study of junctionless dual material double gate silicon on insulator (SOI) and silicon on nothing (SON) MOSFET},
  author={Rachana Chauhan and Abhinav and Amrish Kumar and Sanjeev Rai},
  journal={2017 4th International Conference on Power, Control & Embedded Systems (ICPCES)},
  year={2017},
  pages={1-7}
}
In this paper, the electrostatic performance of junctionless dual material double gate (JLDMDG) silicon on insulator (SOI) is compared with that of JLDMDG silicon on nothing (SON) MOSFET. The 2D device simulation is used for the comparison of major electrostatic figure of merits such as threshold voltage (VTh), subthreshold swing, Drain Induced Barrier… CONTINUE READING