A comparative analytical approach for gate leakage current optimization in silicon MOSFET: A step to more reliable electronic device

Abstract

A comparative analytical approach for performance evaluation of direct tunneling gate leakage current of ultrathin silicon MOS device has been introduced. Direct tunnel characteristics in NMOSFET with different gate dielectric material (fifth, SiCh and AI2O3) at nanoscale regime has been analyzed. The variations of direct tunneling current with gate length… (More)

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Cite this paper

@article{Khan2016ACA, title={A comparative analytical approach for gate leakage current optimization in silicon MOSFET: A step to more reliable electronic device}, author={Asif Abdullah Khan and Aran Audhikary and Md. Fahim-Al-Fattah and Md. Ashiqul Amin and Rajesh Nandi}, journal={2016 3rd International Conference on Electrical Engineering and Information Communication Technology (ICEEICT)}, year={2016}, pages={1-5} }