## Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

- Enrico Santi, Kang Peng, Homer Alan Mantooth, Jerry L. Hudgins
- IEEE Transactions on Electron Devices
- 2015

- Published 2013 in 2013 IEEE Topical Conference on Biomedical…
DOI:10.1109/RWS.2013.6486712

This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a… (More)