A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices

@article{Trivedi2004ACQ,
  title={A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices},
  author={V. Trivedi and J. G. Fossum and Francisco G{\'a}miz},
  journal={IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.},
  year={2004},
  pages={763-766}
}
Physical insights, Monte Carlo simulations, and QM-(quantum mechanics) based analysis are used to develop a compact model for effective carrier mobility in generic ultra-thin-body (UTB) silicon CMOS devices. The model accounts for crucial dependences on UTB thickness as well as electric field and crystal orientation, and has only two tuning parameters that… CONTINUE READING