A compact 60GHz power amplifier using slow-wave transmission lines in 65nm CMOS

This paper describes a 60GHz power amplifier implemented in 7-metal-layer 65nm Low-Power (LP) CMOS process. Matching networks with slow-wave transmission-lines are used to reduce the chip size and to optimize passive component performances. For a characteristic impedance of 47 ohms, these lines reach a quality factor of 19.4, an attenuation constant and an… CONTINUE READING