A column-base InP lateral bipolar transistor

@article{Tacano1988ACI,
  title={A column-base InP lateral bipolar transistor},
  author={Munecazu Tacano and Akihiro Tamura and Kinya Ōigawa and S.-I. Uekusa and Y. Sugiyama},
  journal={IEEE Electron Device Letters},
  year={1988},
  volume={9},
  pages={380-382}
}
An InP lateral bipolar transistor has been successfully fabricated on a semi-insulating substrate by implanting Si/sup +/ as the emitter and collector contacts and Mg/sup +/ as the column base. An array of 33 1- mu m-diameter columns with 1- mu m separation between each was formed between the emitter-collector spacing of 3 mu m. A current gain of 290 was obtained at 77 K; it was over 12 at room temperature.<<ETX>> 

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