A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

@article{Roy2005ACC,
  title={A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET},
  author={A. S. Roy and J.-M. Sallese and C. C. Enz},
  journal={Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.},
  year={2005},
  pages={149-152}
}
Although both exact (Taul et al.,2004) and design oriented approximate (Sallese et al., 2005) closed-form analytical solution of the drain current for the symmetric double gate (DG) MOST exist, a closed-form expression for asymmetric DG MOST is still lacking. This work presents an analytic closed-form charge-based expression for the drain current for asymmetric DG MOST. The expression presented in this work is valid from weak to strong inversion and retains the asymptotic behavior. 
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