A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

Abstract

A mobility model for high-k gate-dielectric Ge pMOSFET with metal gate electrode is proposed by considering the scattering of channel carriers by surface-optical phonons in the high-k gate dielectric. The effects of structural and physical parameters (e.g. gate dielectric thickness, electron density, effective electron mass and permittivity of gate… (More)
DOI: 10.1016/j.microrel.2010.04.016

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