A breakdown voltage doubler for high voltage swing drivers

@article{Mandegaran2004ABV,
  title={A breakdown voltage doubler for high voltage swing drivers},
  author={Sam Mandegaran and Ali Hajimiri},
  journal={Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)},
  year={2004},
  pages={103-106}
}
A novel breakdown voltage (BV) doubler is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 /spl Omega/ load was implemented in a SiGe BiCMOS process. It uses the BV-doubler topology to achieve output swings twice the collector-emitter breakdown voltage without… CONTINUE READING

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-4 of 4 references

SiGe Circuit with High Output Amplitude Operating up to 23 Gb/s,

R. Schmid, T. F. Meister, M. Rest, H.-M. Rein
IEEE J. Solid-State Circuits, • 1999

40Gbit/s EAM driver IC in SiGe bipolar technology,

R. Schmid, T. F. Meister, M. Rest, H.-M. Rein
Electronics Letters, • 1998

A Versatile Si-Bipolar Driver Circuit with High Output Voltage Swing for External and Direct Laser Modulation in 10 Gb/s Optical-Fiber Links,

H.-M. Rein, R Schmid, P. Weger T. Smith, T Herzog, R. Lachner
IEEE J. Solid-State Circuits, • 1994

Similar Papers

Loading similar papers…