A body-voltage-sensing-based short pulse reading circuit for spin-torque transfer RAMs (STT-RAMs)

@article{Ren2012ABS,
  title={A body-voltage-sensing-based short pulse reading circuit for spin-torque transfer RAMs (STT-RAMs)},
  author={Fengbo Ren and Henry S Park and Richard Dorrance and Yuta Toriyama and Chih-Kong Ken Yang and Dejan Markovic},
  journal={Thirteenth International Symposium on Quality Electronic Design (ISQED)},
  year={2012},
  pages={275-282}
}
With scaling of CMOS and Magnetic Tunnel Junction (MTJ) devices, conventional low-current reading techniques for STT-RAMs face challenges in achieving reliability and performance improvements that are expected from scaled devices. The challenges arise from the increasing variability of the CMOS sensing current and the reduction in MTJ switching current. This paper proposes a short-pulse reading circuit, based on a body-voltage sensing scheme to mitigate the scaling issues. Compared to existing… CONTINUE READING
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