A Wideband IM3 Cancellation Technique for CMOS Π- and T-Attenuators

@article{Cheng2013AWI,
  title={A Wideband IM3 Cancellation Technique for CMOS Π- and T-Attenuators},
  author={Wei Cheng and Mark S. Oude Alink and Anne-Johan Annema and Gerard Wienk and Bram Nauta},
  journal={J. Solid-State Circuits},
  year={2013},
  volume={48},
  pages={358-368}
}
A wideband IM3 cancellation technique for CMOS attenuators is presented. With proper transistor width ratios, the dominant distortion currents of transistor switches cancel each other. As a result, a high IIP3 robust to PVT variations can be achieved without using large transistors. Two prototypes in a 0.16 μm standard bulk CMOS process are presented: a Π-attenuator with four discrete settings obtains +26 dBm IIP3 and +3 dBm 1 dB-compression point (CP) for 50 MHz to 5 GHz with only 0.0054 mm2… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 12 REFERENCES

Digitally-controlled RF passive attenuator in 65 nm CMOS for mobile TV tuner ICs

  • Proceedings of 2010 IEEE International Symposium on Circuits and Systems
  • 2010
VIEW 7 EXCERPTS
HIGHLY INFLUENTIAL

Intermodulation Distortion in CMOS Attenuators and Switches

  • IEEE Journal of Solid-State Circuits
  • 2007
VIEW 5 EXCERPTS
HIGHLY INFLUENTIAL

Analysis and Design of RF CMOS Attenuators

  • IEEE Journal of Solid-State Circuits
  • 2008
VIEW 4 EXCERPTS
HIGHLY INFLUENTIAL

Benchmark Tests for MOSFET Compact Models With Application to the PSP Model

  • IEEE Transactions on Electron Devices
  • 2009
VIEW 1 EXCERPT