A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS


A frequency-scalable, three-stage, transformer-coupled millimeter-wave power amplifier (PA) is implemented in 130 nm SiGe-BiCMOS. Differential common-base gain stages extend collector-emitter breakdown voltage beyond 3 V, while collector-emitter neutralization increases reverse isolation and stability. Monolithic self-shielded transformers designed for low… (More)
DOI: 10.1109/JSSC.2012.2201275


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