A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1&#x2013;10.6-GHz Impulse-Radio UWB Transmitter in 0.18-<formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox {m}}$</tex></formula> CMOS


This paper presents the design of a low-power single-full-band (3.1-10.6 GHz) noncarrier impulse-radio ultra-wideband (UWB) transmitter (TX) implemented in a commercial 0.18-&#x03BC;m CMOS technology. This UWB TX features fifth-order Gaussian derivative pulse shaping, integrated binary phase-shift keying modulation and 2.5-kV whole-chip electrostatic… (More)


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@article{Wang2011AWE, title={A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1–10.6-GHz Impulse-Radio UWB Transmitter in 0.18-\$\mu\{\hbox \{m\}\}\$ CMOS}, author={Xin Wang and Siqiang Fan and He Tang and Lin Lin and Jian Liu and Qiang Fang and Hui Xue Zhao and A. Wang and Li-wu Yang and Bin Zhao}, journal={IEEE Transactions on Microwave Theory and Techniques}, year={2011}, volume={59}, pages={1109-1116} }