A Very High Performance, Epi-free, And Manufacturable 3.3 V 0.35 /spl mu/m BiCMOS Technology For Wireless Applications

@article{Chyan1997AVH,
  title={A Very High Performance, Epi-free, And Manufacturable 3.3 V 0.35 /spl mu/m BiCMOS Technology For Wireless Applications},
  author={Chyan and Chaudhry and K L Ma and X Chen and Carroll and Nagy and Becerro and Lee and Iannuzzi},
  journal={1997 Symposium on VLSI Technology},
  year={1997},
  pages={35-36}
}
In this paper, an epi-free, manufacturable, and high performance 3.3 V 0.35 pm High-Energy Implanted BiCMOS (HEIBiC) technology will be presented. The developed HEIBiC process includes a single-polysilicon NPN bipolar transistor with product of 138 GHzV is shown to be one of the best results for silicon BiCMOS without an epitaxial buried collector. INTRODUCTION Recently, the applications of low power RF technologies for wireless telecommunication have been intensively studied [ 11, [ 2… CONTINUE READING